Efficiency droop in AlGaInP and GaInN light-emitting diodes

Shim, Jong-In; Han, Dong-Pyo; Kim, Hyunsung; Shin, Dong-Soo; Lin, Guan-Bo; Meyaard, David S.; Shan, Qifeng; Cho, Jaehee; Fred Schubert, E.; Shim, Hyunwook; Sone, Cheolsoo

doi:10.1063/1.3694044

Efficiency droop in AlGaInP and GaInN light-emitting diodes

Journal Article · Mon Mar 12 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3694044· OSTI ID:1380998

Shim, Jong-In; Han, Dong-Pyo; Kim, Hyunsung; Shin, Dong-Soo; Lin, Guan-Bo; Meyaard, David S.; Shan, Qifeng; Cho, Jaehee; Fred Schubert, E.; Shim, Hyunwook; Sone, Cheolsoo

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1380998

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 100; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (13)

Auger recombination rates in nitrides from first principles Delaney, Kris T.; Rinke, Patrick; Van de Walle, Chris G. Applied Physics Letters, Vol. 94, Issue 19 https://doi.org/10.1063/1.3133359	journal	May 2009
Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes Meyaard, David S.; Lin, Guan-Bo; Shan, Qifeng Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671395	journal	December 2011
An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas Shim, Jong-In; Kim, Hyungsung; Shin, Dong-Soo Journal of the Korean Physical Society, Vol. 58, Issue 3 https://doi.org/10.3938/jkps.58.503	journal	March 2011
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes Mukai, Takashi; Yamada, Motokazu; Nakamura, Shuji Japanese Journal of Applied Physics, Vol. 38, Issue Part 1, No. 7A https://doi.org/10.1143/JJAP.38.3976	journal	July 1999
Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes Bochkareva, N. I.; Voronenkov, V. V.; Gorbunov, R. I. Applied Physics Letters, Vol. 96, Issue 13 https://doi.org/10.1063/1.3367897	journal	March 2010
On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes Meyaard, David S.; Shan, Qifeng; Dai, Qi Applied Physics Letters, Vol. 99, Issue 4 https://doi.org/10.1063/1.3618673	journal	July 2011
Light-Emitting Diodes Schubert, E. Fred https://doi.org/10.1017/CBO9780511790546	book	January 2006
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes Xu, Jiuru; Schubert, Martin F.; Noemaun, Ahmed N. Applied Physics Letters, Vol. 94, Issue 1 https://doi.org/10.1063/1.3058687	journal	January 2009
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes Yang, Yi; Cao, Xian An; Yan, Chunhui IEEE Transactions on Electron Devices, Vol. 55, Issue 7 https://doi.org/10.1109/TED.2008.923561	journal	July 2008
Efficiency droop in nitride-based light-emitting diodes Piprek, Joachim physica status solidi (a), Vol. 207, Issue 10, p. 2217-2225 https://doi.org/10.1002/pssa.201026149	journal	July 2010
Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization Wang, Jiaxing; Wang, Lai; Zhao, Wei Applied Physics Letters, Vol. 97, Issue 20 https://doi.org/10.1063/1.3520139	journal	November 2010

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