Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Dai, Qi; Shan, Qifeng; Wang, Jing; Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

doi:10.1063/1.3493654

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Journal Article · Thu Sep 30 00:00:00 EDT 2010 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.3493654· OSTI ID:1065179

Dai, Qi ^[1]; Shan, Qifeng ^[1]; Wang, Jing ^[1]; Chhajed, Sameer ^[1]; Cho, Jaehee ^[1]; Schubert, E. Fred ^[1]; Crawford, Mary H. ^[2]; Koleske, Daniel D. ^[2]; Kim, Min-Ho ^[3]; Park, Yongjo ^[3]

Rensselaer Polytechnic Inst., Troy, NY (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Samsung LED, Suwon (Korea)

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn² +Cn³ +f(n) , where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10^-29 cm⁶ s^-1 . Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Research Organization:: Energy Frontier Research Centers (EFRC); EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1065179

Journal Information:: Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Vol. 97

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

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