Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Samsung LED, Suwon (Korea)
We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn2 +Cn3 +f(n) , where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10-29 cm6 s-1 . Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1065179
- Journal Information:
- Appl. Phys. Lett., Vol. 97; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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