Room temperature excitonic recombination in GaInN/GaN quantum wells

Journal Article · Mon Nov 11 04:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4830366· OSTI ID:22254078

Langer, Torsten; Bremers, Heiko; Rossow, Uwe; Hangleiter, Andreas ^[1]; Chernikov, Alexey; Kalincev, Dimitri; Gerhard, Marina; Koch, Martin ^[2]

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1. Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstraße 2, 38106 Braunschweig (Germany)
2. Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

The dependence of radiative and nonradiative lifetimes on the excess carrier density in GaInN/GaN quantum wells is studied via time-resolved photoluminescence spectroscopy over a wide range of excitation densities. Our results differ from the predictions of simple free-carrier models: density independent radiative lifetimes clearly evidence the excitonic nature even at room temperature. At high densities, nonradiative lifetimes are weakly temperature dependent and proportional to the inverse of the density, implying an excitonic, threshold-less Auger process. Furthermore, in the intermediate density regime between low and high injection, an increase of the nonradiative lifetimes is observed, which is typical for Shockley-Read-Hall-type recombination.

• OSTI ID: 22254078
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIER DENSITY
DENSITY
GALLIUM NITRIDES
HIGH ROOMS
PHOTOLUMINESCENCE
QUANTUM WELLS
RECOMBINATION
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION