Kapitza resistance of Si/SiO 2 interface

Deng, B.; Chernatynskiy, A.; Khafizov, M.; Hurley, D. H.; Phillpot, S. R.

doi:10.1063/1.4867047

Kapitza resistance of Si/SiO ₂ interface

Journal Article · Thu Feb 27 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4867047· OSTI ID:1383529

Deng, B. ^[1]; Chernatynskiy, A. ^[1]; Khafizov, M. ^[2]; Hurley, D. H. ^[2]; Phillpot, S. R. ^[1]

Univ. of Florida, Gainesville, FL (United States)
Idaho National Lab. (INL), Idaho Falls, ID (United States)

A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO₂ interface in a Si/SiO₂/Si heterostructure. By varying the thickness of SiO₂ layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO₂ interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Materials Science of Nuclear Fuel (CMSNF); Idaho National Lab. (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 1383529

Alternate ID(s):: OSTI ID: 1161591

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 115; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
defects
materials and chemistry by design
nuclear (including radiation effects)
phonons
thermal conductivity