Measurement of the Kapitza resistance across a bicrystal interface

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3573511· OSTI ID:1065627

Hurley, David H. ^[1]; Khafizov, Marat ^[1]; Shinde, S. L. ^[2]

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1. Idaho National Laboratory (INL), Idaho Falls, ID (United States)
2. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

The Kapitza resistance across a Si bicrystal interface was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a Si bicrystal with the vertically oriented boundary intersecting the sample surface. High resolution transmission electron microscopy of the boundary region revealed a thin SiO₂ layer at the interface. By comparing experimental results with a continuum thermal transport model the Kapitza resistance between the Si and SiO₂ was estimated to be 2.3 × 10^-9 m²K/W.

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for Materials Science of Nuclear Fuel (CMSNF)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: AC07-05ID14517
• OSTI ID: 1065627
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 8; Related Information: CMSNF partners with Idaho National Laboratory (lead); Colorado School of Mines; University of Florida; Oak Ridge National Laboratory; Purdue University; University of Wisconsin at Madison; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

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