Measurement of the Kapitza Resistance Across a Bicrystal Interface

Journal Article · Fri Apr 01 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3573511· OSTI ID:1020285

Hurley, D H; Khafizov, M; Shinde, S L

The Kapitza resistance between Si and amorphous SiO2 was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a bicrystal with the vertically oriented boundary intersecting the sample surface. Our measurement of the Kapitza resistance compares closely with that predicted using the acoustic mismatch model.

• Research Organization: Idaho National Lab. (INL), Idaho Falls, ID (United States)
• Sponsoring Organization: DOE - SC
• DOE Contract Number: DE-AC07-05ID14517
• OSTI ID: 1020285
• Report Number(s): INL/JOU-10-20595; TRN: US201116%%232
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 8; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACOUSTICS
BICRYSTALS
GEOMETRY
KAPITZA RESISTANCE
LASERS
MICROSCOPY
PROBES
TRANSPORT
Kapitza
time resolved
laser
thermal wave