Kapitza resistance of Si/SiO2 interface
Journal Article
·
· Journal of Applied Physics
OSTI ID:1129966
A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.
- Research Organization:
- Idaho National Laboratory (INL)
- Sponsoring Organization:
- DOE - SC
- DOE Contract Number:
- AC07-05ID14517
- OSTI ID:
- 1129966
- Report Number(s):
- INL/JOU-14-31168
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 115
- Country of Publication:
- United States
- Language:
- English
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