Growth of indium-tin-oxide thin films by atomic layer epitaxy
- Univ. of Helsinki (Finland). Dept. of Chemistry
Transparent and conducting indium-tin-oxide (ITO) finds use in numerous thin-film applications, e.g., as transparent electrodes in flat panel displays and electrochromic windows, as active and passive components in photovoltaic devices, and as long infrared wavelength (IR) radiation reflecting heat mirror layers in energy efficient windows. Indium-tin-oxide thin films were deposited by atomic layer epitaxy at 500 C using InCl{sub 3}, SnCl{sub 4}, and water as precursors. The films were characterized by means of X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, polarography, and by optical and electrical measurements. The films had polycrystalline In{sub 2}O{sub 3} structure. In addition, the SnO{sub 2} phase was detected in films containing the highest tin contents. High transparencies and resistivities in the order of 2.4{times}10{sup {minus}4} {Omega}cm could be achieved by optimizing the tin doping procedure. Postannealing decreased the resistivity about 5%.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 131783
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 10 Vol. 142; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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