Atomic layer deposition of indium tin oxide thin films using nonhalogenated precursors.
- Energy Systems
This article describes a new atomic layer deposition (ALD) method for preparing indium tin oxide (ITO) thin films using nonhalogenated precursors. The indium oxide (In{sub 2}O{sub 3}) was deposited using alternating exposures to cyclopentadienyl indium (InCp) and ozone, and the tin oxide (SnO{sub 2}) used alternating exposures to tetrakis(dimethylamino) tin (TDMASn) and hydrogen peroxide. By adjusting the relative number of In{sub 2}O{sub 3} and SnO{sub 2} ALD cycles, we deposited ITO films with well-controlled SnO{sub 2} content. The ITO films were examined using four-point probe and Hall probe measurements, spectrophotometry, ellipsometry, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, and X-ray diffraction. The lowest resistivity (3 x 10{sup -4} {Omega}cm) and highest optical transparency (92%) were obtained for films containing 5% SnO{sub 2}. The ITO films were slightly thinner and contained more SnO{sub 2} than expected on the basis of rule-of-mixtures predictions. In situ measurements revealed that these discrepancies result from an inhibition of the In{sub 2}O{sub 3} growth following the SnO{sub 2} doping layers. This new ALD method is suitable for applying ITO layers on very high aspect ratio nanoporous membranes to be used in photovoltaic or spectroelectrochemical applications.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1008291
- Report Number(s):
- ANL/MSD/JA-68964
- Journal Information:
- J. Phys. Chem. C, Journal Name: J. Phys. Chem. C Journal Issue: Jan. 2008 Vol. 112; ISSN 1932-7447
- Country of Publication:
- United States
- Language:
- ENGLISH
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