Growth of In[sub 2]O[sub 3] thin films by atomic layer epitaxy
- Univ. of Helsinki (Finland). Dept. of Chemistry
Simultaneously occurring transparency and electrical conductivity give rise to numerous thin film applications for indium oxide doped with tin (ITO), e.g., as transparent electrodes in flat panel displays and electrochromic windows, as active and passive components in photovoltaic devices, and as long wavelength IR radiation reflecting heat mirror layers in energy saving windows. Indium oxide thin films were deposited by atomic layer epitaxy technique at 400 and 500 C using InCl[sub 3] and water as reactants. The films were characterized by means of X-ray diffraction, Rutherford backscattering spectrometry, nuclear reaction analysis, scanning electron microscopy, and by optical and electrical measurements. The highest deposition rate obtained was only 0.27 [angstrom]/cycle. The films were polycrystalline In[sub 2]O[sub 3] having the [100] direction as the most pronounced orientation. The resistivities of the highly transparent films were in the order of 3 [times] 10[sup [minus]3] [Omega]-cm.
- OSTI ID:
- 6734636
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:11; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
CHALCOGENIDES
CHLORIDES
CHLORINE COMPOUNDS
COATINGS
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
EXPERIMENTAL DATA
FLUIDS
GASES
GLASS
HALIDES
HALOGEN COMPOUNDS
INDIUM CHLORIDES
INDIUM COMPOUNDS
INDIUM OXIDES
INFORMATION
MICROSTRUCTURE
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
USES
VAPORS
WATER VAPOR