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Title: Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles

Abstract

A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
The University of Massachusetts, Boston, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1223115
Patent Number(s):
9,156,682
Application Number:
13/480,506
Assignee:
The University of Massachusetts (Boston, MA)
DOE Contract Number:  
FG02-96ER45612
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 May 25
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Russell, Thomas P., Hong, Sung Woo, Lee, Doug Hyun, Park, Soojin, and Xu, Ting. Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles. United States: N. p., 2015. Web.
Russell, Thomas P., Hong, Sung Woo, Lee, Doug Hyun, Park, Soojin, & Xu, Ting. Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles. United States.
Russell, Thomas P., Hong, Sung Woo, Lee, Doug Hyun, Park, Soojin, and Xu, Ting. Tue . "Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles". United States. https://www.osti.gov/servlets/purl/1223115.
@article{osti_1223115,
title = {Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles},
author = {Russell, Thomas P. and Hong, Sung Woo and Lee, Doug Hyun and Park, Soojin and Xu, Ting},
abstractNote = {A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.},
doi = {},
url = {https://www.osti.gov/biblio/1223115}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}

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