Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles

Russell, Thomas P.; Hong, Sung Woo; Lee, Doug Hyun; Park, Soojin; Xu, Ting

Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles

Patent · Tue Oct 13 00:00:00 EDT 2015

OSTI ID:1223115

Russell, Thomas P.; Hong, Sung Woo; Lee, Doug Hyun; Park, Soojin; Xu, Ting

A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.

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Research Organization:: The University of Massachusetts, Boston, MA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-96ER45612

Assignee:: The University of Massachusetts (Boston, MA)

Patent Number(s):: 9,156,682

Application Number:: 13/480,506

OSTI ID:: 1223115

Country of Publication:: United States

Language:: English

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