High-resolution parallel-detection sensor array using piezo-phototronics effect
A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.
- Research Organization:
- Georgia Tech Research Corporation, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-07ER46394
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Number(s):
- 9,093,355
- Application Number:
- 13/748,737
- OSTI ID:
- 1202316
- Country of Publication:
- United States
- Language:
- English
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