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Large-scale fabrication of vertically aligned ZnO nanowire arrays

Patent ·
OSTI ID:1157074
A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.
Research Organization:
Georgia Tech Research Corporation, Atlanta, GA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-07ER46394
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
Patent Number(s):
8,829,767
Application Number:
13/473,867
OSTI ID:
1157074
Country of Publication:
United States
Language:
English

References (1)

MEMS power generator with transverse mode thin film PZT journal July 2005

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