Large-scale lateral nanowire arrays nanogenerators
Patent
·
OSTI ID:1117632
In a method of making a generating device, a plurality of spaced apart elongated seen members are deposited onto a surface of a flexible non-conductive substrate. An elongated conductive layer is applied to a top surface and a first side of each seed member, thereby leaving an exposed second side opposite the first side. A plurality of elongated piezoelectric nanostructures is grown laterally from the second side of each seed layer. A second conductive material is deposited onto the substrate adjacent each elongated first conductive layer so as to be soupled the distal end of each of the plurality of elongated piezoelectric nanostructures. The second conductive material is selected so as to form a Schottky barrier between the second conductive material and the distal end of each of the plurality of elongated piezoelectric nanostructures and so as to form an electrical contact with the first conductive layer.
- Research Organization:
- Georgia Tech Research Corporation, Atlanta, GA, USA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-07ER46394
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Number(s):
- 8,623,451
- Application Number:
- 12/943,499
- OSTI ID:
- 1117632
- Country of Publication:
- United States
- Language:
- English
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