Piezo-phototronic sensor
Patent
·
OSTI ID:1176523
A device includes a substrate having a first surface. A piezoelectric nanowire is disposed on the first surface of the substrate. The piezoelectric nanowire has a first end and an opposite second end. The piezoelectric nanowire is subjected to an amount of strain. A first Schottky contact is in electrical communication with the first end of the piezoelectric nanowire. A second Schottky contact is in electrical communication with the second end of the piezoelectric nanowire. A bias voltage source is configured to impart a bias voltage between the first Schottky contact and the second Schottky contact. A mechanism is configured to measure current flowing through the piezoelectric nanowire. The amount of strain is selected so that a predetermined current will flow through the piezoelectric nanowire when light of a selected intensity is applied to a first location on the piezoelectric nanowire.
- Research Organization:
- Georgia Tech Research Corporation, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-07ER46394
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Number(s):
- 8,558,329
- Application Number:
- 12/945,077
- OSTI ID:
- 1176523
- Country of Publication:
- United States
- Language:
- English
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