Diamond deposition from fluorinated precursors using microwave-plasma chemical vapor deposition
- Sandia National Laboratories, Livermore, California 94551-0969 (United States)
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205 (United States)
Diamond thin films were grown using fluorinated precursors by microwave plasma-assisted chemical vapor deposition. Using CH{sub 4}/H{sub 2}, CH{sub 3}F/H{sub 2}, and CF{sub 4}/H{sub 2} gas mixtures, films were grown at surface temperatures in the range 600--900 {degree}C at constant microwave power, carbon mole fraction, and pressure. Growth activation energies for the CH{sub 4}/H{sub 2}, CH{sub 3}F/H{sub 2}, and CF{sub 4}/H{sub 2} mixtures were 12.6{plus_minus}1.8, 13.7{plus_minus}1.2, and 12.4{plus_minus}1.1 kcal/mole, respectively. Argon ion etching in conjunction with x-ray photoelectron spectroscopy indicated negligible fluorine incorporation into the films. These results are consistent with the hypothesis that diamond is grown from the same intermediates, namely methyl radicals and atomic hydrogen, for all of these mixtures. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 118388
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 67; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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