Power module packaging with double sided planar interconnection and heat exchangers
Patent
·
OSTI ID:1182569
A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Number(s):
- 9,041,183
- Application Number:
- 13/547,937
- OSTI ID:
- 1182569
- Country of Publication:
- United States
- Language:
- English
300A 650V 70 um thin IGBTs with double-sided cooling
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conference | May 2011 |
SKiN: Double side sintering technology for new packages
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conference | May 2011 |
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