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Title: Power module packaging with double sided planar interconnection and heat exchangers

Patent ·
OSTI ID:1182569

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Number(s):
9,041,183
Application Number:
13/547,937
OSTI ID:
1182569
Country of Publication:
United States
Language:
English

References (5)

Semiconductor unit with cooling system patent March 2006
Semiconductor devices with layers having extended perimeters for improved cooling and methods for cooling semiconductor devices patent November 2009
Circuit device, circuit module, and outdoor unit patent July 2010
300A 650V 70 um thin IGBTs with double-sided cooling conference May 2011
SKiN: Double side sintering technology for new packages conference May 2011

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