Light emitting diode with porous SiC substrate and method for fabricating

Li, Ting; Ibbetson, James; Keller, Bernd

Light emitting diode with porous SiC substrate and method for fabricating

Patent · Tue Dec 06 04:00:00 EST 2005

OSTI ID:1175568

Li, Ting; Ibbetson, James; Keller, Bernd

A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

Research Organization:: Cree, Inc., Goleta, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-00NT40985

Assignee:: Cree, Inc. (Goleta, CA)

Patent Number(s):: 6,972,438

Application Number:: 10/676,953

OSTI ID:: 1175568

Country of Publication:: United States

Language:: English

References (8)

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Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes Windisch, R.; Rooman, C.; Meinlschmidt, S. Applied Physics Letters, Vol. 79, Issue 15 https://doi.org/10.1063/1.1397758	journal	October 2001
Blue electroluminescence from porous silicon carbide Mimura, Hidenori; Matsumoto, Takahiro; Kanemitsu, Yoshihiko Applied Physics Letters, Vol. 65, Issue 26 https://doi.org/10.1063/1.112388	journal	December 1994
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography Windisch, R.; Dutta, B.; Kuijk, M. IEEE Transactions on Electron Devices, Vol. 47, Issue 7 https://doi.org/10.1109/16.848298	journal	July 2000
High brightness AlGaInP light-emitting diodes Streubel, K.; Linder, N.; Wirth, R. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2 https://doi.org/10.1109/2944.999187	journal	January 2002
Direct observation of porous SiC formed by anodization in HF Shor, Joseph S.; Grimberg, Ilana; Weiss, Ben‐Zion Applied Physics Letters, Vol. 62, Issue 22 https://doi.org/10.1063/1.109226	journal	May 1993
30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes Schnitzer, I.; Yablonovitch, E.; Caneau, C. Applied Physics Letters, Vol. 63, Issue 16 https://doi.org/10.1063/1.110575	journal	October 1993
Surface, Pore Morphology, and Optical Properties of Porous 4H-SiC Zangooie, S.; Arwin, H. Journal of The Electrochemical Society, Vol. 148, Issue 6 https://doi.org/10.1149/1.1368109	journal	January 2001

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Light emitting diode with porous SiC substrate and method for fabricating

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