Transistor lasers

Patent · Tue Aug 24 04:00:00 EDT 1993

OSTI ID:6253346

Jain, F C

A transistor laser is described comprising: (a) a semiconductor collector having a semiconductor substrate and n semiconductor layers thereon, said substrate being formed of material compatible with the semiconductor layers placed thereon; (b) a semiconductor base on said collector comprising a p layer; (c) an emitter on said base formed of n semiconductor layers extending the full length of said base and of lesser width than said base; (d) an emitter contact on the outer layer of said emitter; (e) a base contact on said semiconductor base and spaced from said emitter; and (f) a collector contact on the surface of said collector, whereby, when potentials are applied between said conductive contact on said collector and said emitter contact and between said emitter contact and said base contact, a laser beam is generated in said semiconductor base.

• Assignee: Univ. of Connecticut, Storrs, CT (United States)
• Patent Number(s): US 5239550; A
• Application Number: PPN: US 7-802054
• OSTI ID: 6253346
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
LASERS
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
SUBSTRATES