Integrated laser and field effect transistor

Patent · Tue Aug 26 04:00:00 EDT 1986

OSTI ID:5158255

Law, H Y.D.; Rezek, E A

A monolithic laser and electronic device, are described which consists of: a substrate; a semiconductor laser formed on the substrate; and a metal-insulator-semiconductor field-effect transistor (MISFET) also formed on the substrate and having one electrical terminal in common with a terminal of the semiconductor laser. The substrate is of a Group III-V compound heavily doped with an impurity of a particular polarity types. The device further includes a laser active layer of a Group III-V compound formed on the substrate, and a MISFET channel region of a Group III-V compound formed over the laser active layer and doped with an impurity of the opposite polarity of the substrate. The semiconductor laser includes a diffused region formed in the MISFET channel region by selective diffusion of a material of the same polarity type as the laser active layer, and an ohmic contact region formed over the diffused region; and The MISFET includes source and drain regions formed over the MISFET active layer, one of the source and drain regions being electrically connected to the ohmic contact region of the semiconductor laser, and an insulated gate terminal disposed between the source and drain regions; and the MISFET is operated in an inversion mode; and the semiconductor laser is disposed at least in part below the level of the MISFET, thereby facilitating the use of planar fabrication techniques.

• Assignee: TRW, Inc., Redondo Beach, CA
• Patent Number(s): US 4608696
• OSTI ID: 5158255
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CRYSTAL DOPING
DESIGN
DIFFUSION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
FIELD EFFECT TRANSISTORS
IMPURITIES
LASERS
LAYERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
TRANSISTORS