Light emitting diode with porous SiC substrate and method for fabricating
A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
- Research Organization:
- Cree, Inc., Goleta, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC26-00NT40985
- Assignee:
- Cree, Inc. (Goleta, CA)
- Patent Number(s):
- 6,972,438
- Application Number:
- 10/676,953
- OSTI ID:
- 1175568
- Country of Publication:
- United States
- Language:
- English
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