Amorphous silicon photovoltaic devices
Abstract
This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.
- Inventors:
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175007
- Patent Number(s):
- 6,784,361
- Application Number:
- 09/957,353
- Assignee:
- BP Corporation North America Inc. (Warrenville, IL)
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Carlson, David E., Lin, Guang H., and Ganguly, Gautam. Amorphous silicon photovoltaic devices. United States: N. p., 2004.
Web.
Carlson, David E., Lin, Guang H., & Ganguly, Gautam. Amorphous silicon photovoltaic devices. United States.
Carlson, David E., Lin, Guang H., and Ganguly, Gautam. 2004.
"Amorphous silicon photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1175007.
@article{osti_1175007,
title = {Amorphous silicon photovoltaic devices},
author = {Carlson, David E. and Lin, Guang H. and Ganguly, Gautam},
abstractNote = {This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.},
doi = {},
url = {https://www.osti.gov/biblio/1175007},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 31 00:00:00 EDT 2004},
month = {Tue Aug 31 00:00:00 EDT 2004}
}
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