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Title: Amorphous silicon photovoltaic devices

Abstract

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Inventors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175007
Patent Number(s):
6,784,361
Application Number:
09/957,353
Assignee:
BP Corporation North America Inc. (Warrenville, IL) OSTI
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Carlson, David E., Lin, Guang H., and Ganguly, Gautam. Amorphous silicon photovoltaic devices. United States: N. p., 2004. Web.
Carlson, David E., Lin, Guang H., & Ganguly, Gautam. Amorphous silicon photovoltaic devices. United States.
Carlson, David E., Lin, Guang H., and Ganguly, Gautam. Tue . "Amorphous silicon photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1175007.
@article{osti_1175007,
title = {Amorphous silicon photovoltaic devices},
author = {Carlson, David E. and Lin, Guang H. and Ganguly, Gautam},
abstractNote = {This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 31 00:00:00 EDT 2004},
month = {Tue Aug 31 00:00:00 EDT 2004}
}

Patent:

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