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Title: Amorphous silicon photovoltaic devices

Patent ·
OSTI ID:1175007

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-83CH10093
Assignee:
BP Corporation North America Inc. (Warrenville, IL)
Patent Number(s):
6,784,361
Application Number:
09/957,353
OSTI ID:
1175007
Country of Publication:
United States
Language:
English

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