Amorphous silicon photovoltaic device including a two layer transparent electrode

Patent · Tue Jan 01 00:00:00 EST 1985

OSTI ID:5720724

Hamakawa, Y; Tawada, Y

An amorphous silicon semiconductor of the general formula: a-Si( /sub 1-x-y/ )C /sub x/ N /sub y/ containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type semiconductor in the layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a film of ITO and SnO/sub 2/ two layer structure as a transparent electrode for the photovoltaic device with the SnO/sub 2/ layer contacting the P or N layer, and the improvement is particularly marked in the heterojunction photovoltaic device.

• Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha (Japan)
• Patent Number(s): US 4491682
• OSTI ID: 5720724
• Resource Relation: Patent Priority Date: Priority date 17 Nov 1983, Japan; Other Information: PAT-APPL-552952
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
DESIGN
EFFICIENCY
ELECTRIC CONTACTS
ELECTRODES
HETEROJUNCTIONS
INDIUM OXIDES
N-TYPE CONDUCTORS
P-N JUNCTIONS
P-TYPE CONDUCTORS
TIN OXIDES
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
EQUIPMENT
INDIUM COMPOUNDS
JUNCTIONS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
TIN COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion