Amorphous silicon photovoltaic device including a two layer transparent electrode

Patent · Tue Jan 01 04:00:00 EST 1985

OSTI ID:5720724

Hamakawa, Y; Tawada, Y

An amorphous silicon semiconductor of the general formula: a-Si( /sub 1-x-y/ )C /sub x/ N /sub y/ containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type semiconductor in the layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a film of ITO and SnO/sub 2/ two layer structure as a transparent electrode for the photovoltaic device with the SnO/sub 2/ layer contacting the P or N layer, and the improvement is particularly marked in the heterojunction photovoltaic device.

• Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha (Japan)
• Patent Number(s): US 4491682
• OSTI ID: 5720724
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
DESIGN
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRODES
EQUIPMENT
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM OXIDES
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TIN COMPOUNDS
TIN OXIDES