Amorphous silicon photovoltaic device having two-layer transparent electrode

Patent · Tue May 22 00:00:00 EDT 1984

OSTI ID:6295827

Hamakawa, Y; Tawada, Y

An amorphous silicon semiconductor of the general formula: a-Si(/sub 1//sub -/ /SUB x/ /sub -/ /SUB y/)C /SUB x/ N /SUB y/ containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO/sub 2/ as a transparent electrode for the photovoltaic device, with the SnO/sub 2/ layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.

• Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha (Japan)
• Patent Number(s): US 4450316
• OSTI ID: 6295827
• Resource Relation: Patent Priority Date: Priority date 19 Jul 1982, Japan; Other Information: PAT-APPL-399312
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
FABRICATION
AMORPHOUS STATE
ELECTRODES
FLUORINE
HETEROJUNCTIONS
HYDROGEN
LAYERS
P-N JUNCTIONS
TIN OXIDES
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HALOGENS
JUNCTIONS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
TIN COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion