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High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon

Patent ·
OSTI ID:5718626
;
A p-i-n amorphous silicon photovoltaic cell of improved conversion efficiency is obtained by incorporating, as either the P or N type side of the cell exposed to the incident light, an amorphous semiconductor which satisfies the requirements that the optical band gap, Eg.Opt, be not less than about 1.85 ev, the electric conductivity be not less than about 10-8 ( Omega .Cm)-1 the p-i-n junction diffusion potential, Vd, be not less than about 1.1 volts, and be formed of a substance represented by one of the general formulas, a-Si(1-x)Cx and a-Si(1-y)Ny.
Assignee:
EDB-83-175703
Patent Number(s):
US 4388482
OSTI ID:
5718626
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
DESIGN
DIFFUSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
HETEROJUNCTIONS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT