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U.S. Department of Energy
Office of Scientific and Technical Information

Photovoltaic device

Patent ·
OSTI ID:5659001
A photovoltaic device is disclosed that comprises a transparent substrate, an amorphous silicon layer structure of a p-i-n type formed on the substrate, a p-layer, i-layer and n-layer, and an electrode formed on the amorphous silicon layer structure. The p-layer and n-layer of the amorphous silicon layer structure, on which light is incident is constituted such that its optical forbidden band gap is greater on the i-layer side than on the substrate side.
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha (Japan)
Patent Number(s):
US 4500744
OSTI ID:
5659001
Country of Publication:
United States
Language:
English