Photovoltaic device

Patent · Tue Jun 02 04:00:00 EDT 1981

OSTI ID:6172898

Adachi, T; Hamakawa, Y; Nitta, Y; Okamoto, H

A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the N type, I type and P type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.

• Assignee: IFI; EDB-81-109704
• Patent Number(s): US 4271328
• OSTI ID: 6172898
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
AMORPHOUS STATE
CHROMIUM ALLOYS
CORROSION RESISTANT ALLOYS
DESIGN
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTORS
EQUIPMENT
IRON ALLOYS
IRON BASE ALLOYS
LAYERS
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STAINLESS STEELS
STEELS
SUBSTRATES
VOLTAGE DROP