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Gain and Defect Bi-Stability in Radiation Damaged Silicon Bipolar Transistors.

Journal Article · Fri Nov 30 23:00:00 EST 2007 · Physica. B, Condensed Matter

DOI:https://doi.org/10.1016/j.physb.2007.08.105· OSTI ID:1147304

Fleming, Robert M.; Bielejec, Edward S.; Campbell, Jonathan; Seager, C. H.; Lang, D. V.

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1147304

Report Number(s):: SAND2007-4549J; 522381

Journal Information:: Physica. B, Condensed Matter, Journal Name: Physica. B, Condensed Matter Vol. 401-402; ISSN 0921-4526

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

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