Annealing Neutron Damaged Silicon Bipolar Transistors - Relating Gain Degradation to Specific Lattice Defects.
Journal Article
·
· Journal of Applied Physics
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1124286
- Report Number(s):
- SAND2010-4611J; 492985
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 108; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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