Defect-driven gain bistability in neutron damaged, silicon bipolar transistors

Journal Article · Mon Apr 23 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2731516· OSTI ID:20971873

Fleming, R M; Seager, C H; Lang, D V; Bielejec, E; Campbell, J M ^[1]

---

1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

Using deep level transient spectroscopy, the authors have measured the defect spectrum in the collector of a n-p-n bipolar transistor following fast neutron irradiation as well as the gain on the same device. They show that a slow change observed in both the gain and deep level traps in the n-type collector at 300 K are bistable. The transistor gain and the defects can be returned to the postirradiation condition by forward bias at room temperature, i.e., by operating the transistor (gain) or injection through the base-collector diode (defect spectrum)

• OSTI ID: 20971873
• Journal Information: Applied Physics Letters, Vol. 90, Issue 17; Other Information: DOI: 10.1063/1.2731516; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
FAST NEUTRONS
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS