Radiation damage in bipolar junction transistors (BJTs).
Conference
·
OSTI ID:1686331
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1686331
- Report Number(s):
- SAND2012-6005P; 505462
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of displacement damage on photocurrent in silicon bipolar junction transistors.
Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors.
Radiation and Self Heating Effects in Hetero-Junction Bipolar Transistors.
Conference
·
Sat Feb 28 23:00:00 EST 2009
·
OSTI ID:1141412
Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors.
Conference
·
Sat Jul 01 00:00:00 EDT 2006
·
OSTI ID:1264112
Radiation and Self Heating Effects in Hetero-Junction Bipolar Transistors.
Conference
·
Sun Apr 01 00:00:00 EDT 2018
·
OSTI ID:1806979