Novel compound semiconductor devices based on III-V nitrides
Conference
·
OSTI ID:114012
- Florida Univ., Gainesville, FL (United States)
- AT & T Bell Laboratories, Murray Hill, NJ (United States); and others
New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 114012
- Report Number(s):
- SAND--95-2180C; CONF-951243--1; ON: DE96000708
- Country of Publication:
- United States
- Language:
- English
Similar Records
Proceedings of advanced III-V compound semiconductor growth, processing and devices
Fabrication of novel III-N and III-V modulator structures by ECR plasma etching
Reactive etching of III-V semiconductors
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:7110505
Fabrication of novel III-N and III-V modulator structures by ECR plasma etching
Conference
·
Thu Nov 30 23:00:00 EST 1995
·
OSTI ID:171371
Reactive etching of III-V semiconductors
Journal Article
·
Thu Jun 30 00:00:00 EDT 1994
· International Journal of Modern Physics B; (United States)
·
OSTI ID:6887906