Proceedings of advanced III-V compound semiconductor growth, processing and devices

Conference · Tue Dec 31 23:00:00 EST 1991

OSTI ID:7110505

Pearton, S J ^[1]; Sadana, D K ^[2]; Zavada, J M ^[3]

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1. AT and T Bell Laboratories, Murray Hill, NJ (US)
2. IBM Thomas J. Watson Research Center, Yorktown Heights, NY (US)
3. Research Triangle Park, NC (US)

This proceedings volume results from a Material Research Society symposium designed to cover the spectrum of activity in the III-V compound semiconductor arena. This ranges from the growth of epitaxial layers by any one of a number of different techniques, to the processing of these layers using wet and dry etching, ohmic contact or dielectric deposition, lithographic patterning, implantation, annealing or gate metal deposition, and finally to the operation of the completed device. Invited talks on many of these subjects are given first in each section, followed by contributed and poster papers.

• OSTI ID: 7110505
• Report Number(s): CONF-911202--; ISBN: 1-55899-134-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ABSTRACTS
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARBON ADDITIONS
DOCUMENT TYPES
ELECTRONIC CIRCUITS
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INORGANIC COMPOUNDS
ION IMPLANTATION
LAYERS
LEADING ABSTRACT
MATERIALS
MEETINGS
OPERATION
P-TYPE CONDUCTORS
PNICTIDES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING