Proceedings of the symposium on dielectric films on compound semiconductors

Conference · Wed Dec 31 23:00:00 EST 1986

OSTI ID:7072430

Kapoor, V J ^[1]

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1. Cincinnati Univ., OH (USA). Dept. of Electrical and Computer Engineering

This proceeding volume contains the papers presented at the dielectric films on compound semiconductors symposium. This volume is divided into three parts: Devices; Interface and Surface Properties; and Materials Characterization. A total of 25 papers are included. The major area of interest was the fabrication and characterization of gate dielectrics for indium phosphide MISFET technology.

• OSTI ID: 7072430
• Report Number(s): CONF-8710376--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
656001 -- Condensed Matter Physics-- Solid-State Plasma
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSTRACTS
AUGER ELECTRON SPECTROSCOPY
CAPTURE
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIELECTRIC PROPERTIES
DOCUMENT TYPES
ELECTRICAL PROPERTIES
ELECTRICAL TRANSIENTS
ELECTRON CAPTURE
ELECTRON SPECTROSCOPY
FABRICATION
FILMS
GERMANIUM COMPOUNDS
GERMANIUM NITRIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFACES
ION IMPLANTATION
IONS
LEADING ABSTRACT
MATERIALS
MEETINGS
MIS TRANSISTORS
NITRIDES
NITROGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
PROCEEDINGS
RF SYSTEMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
SILICON IONS
SILICON NITRIDES
SOLID-STATE PLASMA
SPECTROSCOPY
SPUTTERING
SURFACE COATING
THIN FILMS
TRANSIENTS
TRANSISTORS
VOLTAGE DROP