Proceedings of the symposium on silicon nitride and silicon dioxide thin insulating films

Conference · Sat Dec 31 23:00:00 EST 1988

OSTI ID:7141424

Bibyk, S B ^[1]; Kapoor, V J ^[2]; Alvi, N S ^[3]

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1. Ohio State Univ., Columbus, OH (USA). Dept. of Electrical Engineering (USA)
2. Cincinnati Univ., OH (USA). Dept. of Electrical and Computer Engineering (USA)
3. Delco Electronics Corp., Kokomo, IN (USA)

This symposium volume is divided into five sections: Charge trapping in multilayer insulating films; New applications of insulating films: neural networks; silicon dioxide and silicon nitride films; Processing and radiation damage; and Hot carrier phenomena. A central theme of the symposium was the combined use of silicon nitride and silicon dioxide as a dielectric system. Silicon nitride often contains other species,such as oxygen, which form oxynitrides, and this leads to a wide variety of process recipes. A variety of standard applications are discussed, such as gate dielectrics in nonvolatile memory devices, interpoly dielectrics, and ultra-thin gate dielectrics for the next generation of devices. New applications are introduced, such as long time constant devices for new information processing circuits known as neural networks.

• OSTI ID: 7141424
• Report Number(s): CONF-8810388--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
99 GENERAL AND MISCELLANEOUS
990200 -- Mathematics & Computers
DESIGN
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRONIC CIRCUITS
EQUIPMENT
INTEGRATED CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS