Fabrication of novel III-N and III-V modulator structures by ECR plasma etching
- Univ. of Florida, Gainesville, FL (United States); and others
Quantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching (Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar or CH{sub 4}/H{sub 2}/Ar plasma chemistries respectively) and subsequent wet chemical etching of a buffer layer underlying the quantum wells. While wet etchants such as HF/H{sub 2}O and HCl/HNO{sub 3}/H{sub 2} O are employed for AlGaAs and InGaP, respectively, a new KOH based solution has been developed for AlN which is completely selective over both GaN and InGaN. Typical mask materials include PR or SiN{sub x}, while the high surface recombination velocity of exposed AlGaAs ({approximately} 10{sup 5} cm{center_dot}sec {sup {minus}1}) requires encapsulation with ECR-CVD SiN{sup x} to stabilize the optical properties of the modulators.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 171371
- Report Number(s):
- SAND--95-2708C; CONF-951155--11; ON: DE96003071
- Country of Publication:
- United States
- Language:
- English
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