Fabrication of novel 3-N and 3-V modulator structures by ECR plasma etching
Quantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching Cl2/CH4/H2/Ar, BCl3/Ar or CH4/H2/Ar plasma chemistries respectively, and subsequent wet chemical etching of a buffer layer underlying the quantum wells. While wet etchants such as HF/H2O and HCl/HNO3/H2O are employed for AlGaAs and InGaP, respectively, a new KOH based solution has been developed for AlN which is completely selective over both GaN and InGaN. Typical mask materials include PR or SiN(x), while the high surface recombination velocity of exposed AlGaAs (approximately) 10(exp 5)cm(center dot)/sec requires encapsulation with ECR-CVD SiN(x) to stabilize the optical properties of the modulators.
- Research Organization:
- Sandia Labs., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 266971
- Report Number(s):
- SAND--95-2708C; CONF-951155--11; DE--96-003071; NIPS--96-37205
- Country of Publication:
- United States
- Language:
- English
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