Method to grow group III-nitrides on copper using passivation layers
Patent
·
OSTI ID:1133649
Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 8,741,748
- Application Number:
- 13/836,594
- OSTI ID:
- 1133649
- Country of Publication:
- United States
- Language:
- English
Epitaxial growth of GaN on copper substrates
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journal | June 2006 |
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