Methods for improved growth of group III nitride buffer layers

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods for improved growth of group III nitride buffer layers

Patent · Tue Jul 15 04:00:00 EDT 2014

OSTI ID:1143685

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

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Research Organization:: NETL (National Energy Technology Laboratory, Pittsburgh, PA, and Morgantown, WV (United States))

Sponsoring Organization:: USDOE

DOE Contract Number:: EE0003331

Assignee:: Applied Materials, Inc. (Santa Clara, CA)

Patent Number(s):: 8,778,783

Application Number:: 13/469,050

OSTI ID:: 1143685

Country of Publication:: United States

Language:: English

References (25)

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