Thin film growth of group III nitrides by mass separated ion beam deposition
Book
·
OSTI ID:581038
- Univ. Konstanz (Germany). Fakultaet fuer Physik
- Univ. Regensburg (Germany)
The authors have grown gallium nitride (GaN), aluminum nitride (AlN) and boron nitride (BN) thin films by mass separated ion beam deposition. All deposited films were found to be almost stoichiometric. AlN and GaN films are crystalline even after room temperature deposition whereas for the formation of crystalline boron nitride temperatures above 150 C are necessary. The influence on the phase formation and the film structure of ion energy and substrate temperature on the one hand, and bond ionicity on the other hand, was investigated for these three systems.
- OSTI ID:
- 581038
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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