A gate drive circuit for gate-turn-off (GTO) devices in series stack.
Conference
·
OSTI ID:11140
A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 11140
- Report Number(s):
- ANL/ASD/CP-97743; TRN: US0104309
- Resource Relation:
- Conference: 1999 Particle Accelerator Conference (PAC '99), New York, NY (US), 03/29/1999--04/02/1999; Other Information: PBD: 13 Apr 1999
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:11140
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