High-frequency 6000-V double gate GTO's

Journal Article · Sun Feb 28 23:00:00 EST 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.199370· OSTI ID:6338916

Ogura, Tsuneo; Nakagawa, Akio; Atsuta, Masaki; Kamei, Yoshio; Takigami, Katsuhiko ^[1]

---

1. Toshiba Corp., Kawasaki (Japan)

A double-gate GTO, which has an additional gate on the n-base layer, has been proposed to realize high-frequency operation for high-power inverters. The double-gate structure has further been combined with an n-buffer structure to realize narrow n-base width. A forward-blocking voltage of 6,000 V was obtained, even at 150 C, when the second gate was shorted to the anode electrode. In order to reduce turn-on and turn-off switching losses, the dependence of these losses on a time interval between two gate triggering pulses has been investigated. It was found that the turn-off loss of approximately 1/20th of that for conventional GTO was achieved by adjusting the time interval between the two gate triggering pulses.

• OSTI ID: 6338916
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:3; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
DATA
DESIGN
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRODES
ELEMENTS
ENERGY LOSSES
EQUIPMENT
EXPERIMENTAL DATA
INFORMATION
INVERTERS
LOSSES
NUMERICAL DATA
OPERATION
PERFORMANCE
POWER LOSSES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SWITCHES
THYRISTORS