Transformation Kinetics of an Intrinsic Bistable Defect in Damaged Silicon.
Journal Article
·
· Journal of Applied Physics
OSTI ID:1107704
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1107704
- Report Number(s):
- SAND2011-4038J; 466058
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics
- Country of Publication:
- United States
- Language:
- English
Similar Records
A Bistable Divacancy-Like Defect in Silicon Damage Cascades.
Gain and Defect Bi-Stability in Radiation Damaged Silicon Bipolar Transistors.
Annealing Neutron Damaged Silicon Bipolar Transistors - Relating Gain Degradation to Specific Lattice Defects.
Journal Article
·
Mon Dec 31 23:00:00 EST 2007
· Journal of Applied Physics
·
OSTI ID:1142838
Gain and Defect Bi-Stability in Radiation Damaged Silicon Bipolar Transistors.
Journal Article
·
Fri Nov 30 23:00:00 EST 2007
· Physica. B, Condensed Matter
·
OSTI ID:1147304
Annealing Neutron Damaged Silicon Bipolar Transistors - Relating Gain Degradation to Specific Lattice Defects.
Journal Article
·
Thu Jul 01 00:00:00 EDT 2010
· Journal of Applied Physics
·
OSTI ID:1124286