The Si(100)-Sb 2{times}1 and Ge(100) 2{times}1 surfaces: A multi-technique study
The electronic and geometric structures of the clean and Sb terminated Si(100)2{times}1 and Ge(100)-2{times}1 surfaces have been investigated using a multi-technique approach. Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), surface extended X-ray absorption fine structure (SEXAFS) spectroscopy and angle-integrated core-level photoemission electron spectroscopy (PES) were employed to measure the surface symmetry, defect structure, relevant bond lengths, atomic coordination and electronic structure. By employing a multi-technique approach, it is possible to correlate changes in the geometric structure to specific features of the core-level lineshape of the substrate. This allows for the assignment of components of the core-level lineshape to be assigned to specific surface and near-surface atoms.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 105652
- Report Number(s):
- SLAC-423; SLAC/SSRL-0057; ON: DE95016467; TRN: 95:020401
- Resource Relation:
- Other Information: PBD: Aug 1993
- Country of Publication:
- United States
- Language:
- English
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