Elimination of gold diffusion in the heterostructure core/shell growth of high performance Ge/Si nanowire HFETs
- Los Alamos National Laboratory
Radial heterostructure nanowires offer the possibility of surface, strain, band-edge and modulution-doped engineering for optimizing performance of nanowire transistors. Synthesis of such heterostructures is non-trivial and is typically accompanied with Au diffusion on the nanowire sidewalls that result in rough morphology and undesired whisker growth. Here, they report a novel growth procedure to synthesize Ge/Si core/multi-shell nanowires by engineering the growth interface between the Au seed and the nanowire sidewalls. Single crystal Ge/Si core/multi-shell nanowires are used to fabricate side-by-side FET transistors with and without Au diffusion. Elimination of Au diffusion in the synthesis of such structures led to {approx} 2X improvement in hole field-effect mobility, transconductances and currents. Initial prototype devices with a 10 nm PECVD nitride gate dielectric resulted in a record maximum on current of 430 {micro}A/V (I{sub DS}L{sub G}/{pi}DV{sub DS}), {approx} 2X higher than ever achieved before in a p-type FET.
- Research Organization:
- Los Alamos National Laboratory (LANL)
- Sponsoring Organization:
- DOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1023414
- Report Number(s):
- LA-UR-10-04716; LA-UR-10-4716
- Country of Publication:
- United States
- Language:
- English
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