Ge/Si core/multi shell heterostructure FETs
- Los Alamos National Laboratory
Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.
- Research Organization:
- Los Alamos National Laboratory (LANL)
- Sponsoring Organization:
- DOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1023413
- Report Number(s):
- LA-UR-10-04712; LA-UR-10-4712
- Country of Publication:
- United States
- Language:
- English
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