Scaling trends in SET pulse widths in Sub-100 nm bulk CMOS processes.
Conference
·
OSTI ID:1021643
Digital single-event transient (SET) measurements in a bulk 65-nm process are compared to transients measured in 130-nm and 90-nm processes. The measured SET widths are shorter in a 65-nm test circuit than SETs measured in similar 90-nm and 130-nm circuits, but, when the factors affecting the SET width measurements (in particular pulse broadening and the parasitic bipolar effect) are considered, the actual SET width trends are found to be more complex. The differences in the SET widths between test circuits can be attributed in part to differences in n-well contact area. These results help explain some of the inconsistencies in SET measurements presented by various researchers over the past few years.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1021643
- Report Number(s):
- SAND2010-4813C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes.
Cryogenic Lifetime Studies of 130 nm and 65 nm CMOS Technologies for High-Energy Physics Experiments
Body the placement in CMOS/SOI digital circuits for transient radiation environments
Conference
·
Sun Jan 31 23:00:00 EST 2010
·
OSTI ID:1124414
Cryogenic Lifetime Studies of 130 nm and 65 nm CMOS Technologies for High-Energy Physics Experiments
Journal Article
·
Thu Jun 04 00:00:00 EDT 2015
· IEEE Transactions on Nuclear Science
·
OSTI ID:1230026
Body the placement in CMOS/SOI digital circuits for transient radiation environments
Conference
·
Sat Nov 30 23:00:00 EST 1991
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5832490