The Atomic Structure and Polarization of Strained StTiO3/Si

Journal Article · Mon Dec 20 04:00:00 UTC 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3529460· OSTI ID:1020912

Kumah, D P; Su, D; Reiner, J W; Segal, Y; Kolpak, A M; Zhang, Z; Zhu, Y; Sawicki, M S; Broadbridge, C C; Ahn, C H; Walker, F J

For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO{sub 3} grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO{sub 3} show that the polarization at the SrTiO{sub 3}/Si interface is dominated by oxide-Si chemical interactions.

• Research Organization: Brookhaven National Laboratory (BNL) Center for Radiation Chemistry Research
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1020912
• Report Number(s): BNL--94847-2011-JA
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

29 ENERGY PLANNING, POLICY, AND ECONOMY
BOUNDARY CONDITIONS
CHARGE CARRIERS
POLARIZATION
SYNCHROTRONS
SrTiO3
THIN FILMS
X-RAY DIFFRACTION
ferroelectrice polarization
synchrotron x-ray diffraction